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p-channel depletion insulated-gate field-effect transistor

См. также в других словарях:

  • Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

  • Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… …   Wikipedia

  • Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

  • MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

  • Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most …   Wikipedia

  • Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) …   Wikipedia

  • Vacuum tube — This article is about the electronic device. For experiments in an evacuated pipe, see free fall. For the transport system, see pneumatic tube. Modern vacuum tubes, mostly miniature style In electronics, a vacuum tube, electron tube (in North… …   Wikipedia

  • MESFET — stands for Metal Epitaxial Semiconductor Field Effect Transistor. It is quite similar to a JFET in construction and terminology. The difference is that instead of using a p n junction for a gate, a Schottky (metal semiconductor) junction is used …   Wikipedia

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